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[必]我已經讀過置底版規、參考費率、發文必讀公告,並願意遵守規定:YES * 如已讀過,請填 YES * 如未讀過,請讀過再重新發文。未填視為未讀,一律刪文處理並警告。 ────────────────────────────────────── [必]工 作 量: 7000字 +3000字 [必]工作報酬: 0.6元/字 [必]涉及語言: 英文 [必]所屬領域: 物理 [必]文件類型: 論文 [必]截 稿 日: 20120701(前7000字) 20120704(後3000字) (後3000字將於20120630提供) [必]應徵期限: 20120625 [必]聯絡方式: 站內信箱 [必]付費方式: 預付500元訂金,完稿後10天內付清。 ────────────────────────────────────── [選]工作要求: 主要為將4篇小論文合併,這四篇論文之前已請人潤稿過。但希望整篇 論文整理後的風格一致,並且最多連續15字與原稿相同。修改期間若對原文意思有疑惑 ,請隨時聯絡。若內文原意被改掉,請接受修改。 [選]參考段落: 如試譯文 [選]試 譯 文: 1. Fig. 1(a) presents a typical empty-state STM image obtained after RT deposition of submonolayer Co onto the Ag/Ge(111)-√3×√3 surface, followed by annealing at 670 K. The picture reveals the 2×2 islands in coexistence with those with the √13×√13 reconstruction. In the inter-island area a defect-free √3×√3 surface structure is fully conserved indicating that no chemical interaction between the deposits and the surface takes place. 2. Ge, as the semiconductor, has promising property for microelectronic technology[], because the characters of Ge doped with Mn can be controlled through a small voltage. Ge(111)-c2×8 is the most thermally stable structure for Ge, thus, we choose Ge(111) surface as the semiconductor substrate. Co is the ferromagnetic d-transition metal due to the high magnetization of Co at room temperature. [選]其他事項:可議價 ────────────────────────────────────── -- ※ 發信站: 批踢踢實業坊(ptt.cc) ◆ From: 140.122.197.198 ※ 編輯: iop620 來自: 140.122.141.10 (06/24 15:46) ※ 編輯: iop620 來自: 140.122.197.57 (06/25 10:45)
文章代碼(AID): #1FviAVIG (translator)
文章代碼(AID): #1FviAVIG (translator)