[潤稿] $3200_半導體類論文_2600字_6/9

看板translator (翻譯接案)作者tastyWhale (@#$%^&*)時間5年前 (2020/06/09 14:02)推噓0(0推 0噓 0→)

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────────────────────────────────────── [必]工作量： 2600字 [必]工作報酬： NTD 3200 若6/9 23:59前交件增至NTD 3600 (接件時先告知) [必]涉及語言：英文 [必]所屬領域：電子/半導體元件 [必]文件類型：期刊 [必]截稿日： 6/10 中午12:00 [必]應徵期限： 6/9 18:00 [必]聯絡方式： weichih.cheng@gmail.com [必]付費方式：完成後隔日匯款完成 ────────────────────────────────────── [選]工作要求：之前有過品質不佳的經驗(像是grammarly潤的-___-，希望可以試譯以下100字 [選]參考段落：（提供部分段落讓譯者評估難度，若未提供請勿刪除） [選]試譯文： GaN-based high electron mobility transistors (HEMTs) have played an important role in power electronics [1]. A high drive current can be achieved due to the high saturation velocity of electrons in GaN and the presence of two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction [2]. Normally-off operation is preferred for power switch application for adequate safety conditions [3]. However, normally-off device options in the mainstream, such as gate-recessed metal-insulator-semiconductor HEMTs (MIS-HEMTs) or p-GaN gate HEMTs [4], require recess processes, which introduce surface damages that may deteriorate the electrical performance, such as on-resistance, off-current, or threshold voltage stability, of the devices. [選]其他事項：（若未提供請勿刪除） ────────────────────────────────────── -- ※ 發信站: 批踢踢實業坊(ptt.cc), 來自: 203.160.86.63 (香港) ※ 文章網址: https://www.ptt.cc/bbs/translator/M.1591682548.A.F63.html ※ 編輯: tastyWhale (203.160.86.39 香港), 06/09/2020 16:46:00